Redundancy system for non-volatile memory

ABSTRACT

A redundancy scheme for Non-Volatile Memories (NVM) is described. This redundancy scheme provides means for using defective cells in non-volatile memories to increase yield. The algorithm is based on inverting the program data for data being programmed to a cell grouping when a defective cell is detected in the cell grouping. Defective cells are biased to either “1” or “0” logic states, which are effectively preset to store its biased logic state. A data bit to be stored in a defective cell having a logic state that is complementary to the biased logic state of the cell results in the program data being inverted and programmed. An inversion status bit is programmed to indicate the inverted status of the programmed data. During read out, the inversion status bit causes the stored data to be re-inverted into its original program data states.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.12/843,498, filed on Jul. 26, 2010, now U.S. Pat. No. 8,369,166, issuedFeb. 5, 2013, which claims the benefit of priority of U.S. ProvisionalPatent Application No. 61/228,704 filed Jul. 27, 2009, the abovementioned applications being incorporated herein by reference in theirentirety.

FIELD OF THE INVENTION

The present invention relates generally to non-volatile memories. Moreparticularly, the present invention relates to a redundancy scheme fornon-volatile memories.

BACKGROUND OF THE INVENTION

Anti-fuse memories are considered a non-volatile memory in which data isretained in the memory cell in the absence of power. An anti-fuse deviceis a structure alterable to a conductive state, or in other words, anelectronic device that changes state from non-conducting to conducting.Equivalently, the binary states can be either one of high resistance andlow resistance in response to electric stress, such as a programmingvoltage or current. Unlike other forms of non-volatile memory such asflash, ferro-electric and magnetic memories, the anti-fuse programmingis intended to be irreversible. Hence anti-fuse memories are referred toas one time programmable (OTP) memories.

A DRAM-type memory array using a planar capacitors as an anti-fuseinstead of as a storage capacitor is already known, as demonstrated inU.S. Pat. No. 6,667,902. FIG. 1 is a circuit diagram of such a memorycell, while FIGS. 2 and 3 show the planar and cross-sectional viewsrespectively, of the known anti-fuse memory cell of FIG. 1. The memorycell of FIG. 1 includes a pass, or access transistor 10 for coupling abitline BL to a bottom plate of anti-fuse device 12. A wordline WL iscoupled to the gate of access transistor 10 to turn it on, and a cellplate voltage Vcp is coupled to the top plate of anti-fuse device 12 forprogramming anti-fuse device 12.

It can be seen from FIGS. 2 and 3 that the layout of access transistor10 and anti-fuse device 12 is very straight-forward and simple. The gate14 of access transistor 10 and the top plate 16 of anti-fuse device 12are constructed with the same layer of polysilicon, which extend acrossactive area 18. In the active area 18 underneath each polysilicon layer,is formed a thin gate oxide 20, also known as a gate dielectric, forelectrically isolating the polysilicon from the active area underneath.On either side of gate 14 are diffusion regions 22 and 24, wherediffusion region 24 is coupled to a bitline. Although not shown, thoseof skill in the art will understand that standard CMOS processing, suchas sidewall spacer formation, lightly doped diffusions (LDD) anddiffusion and gate silicidation, can be applied. While the classicalsingle transistor and capacitor cell configuration is widely used, atransistor-only anti-fuse cell is further desirable due to thesemiconductor array area savings that can be obtained for high-densityapplications. Such transistor-only anti-fuses must be reliable whilesimple to manufacture with a low cost CMOS process.

According to an embodiment of the present invention, FIG. 4A shows across-sectional view of an anti-fuse transistor that can be manufacturedwith any standard CMOS process. In the presently shown example, theanti-fuse transistor is almost identical to a simple thick gate oxide,or input/output MOS transistor with one floating diffusion terminal. Thedisclosed anti-fuse transistor, also termed a split-channel capacitor ora half-transistor, can be reliably programmed such that the fuse linkbetween the polysilicon gate and the substrate can be predictablylocalized to a particular region of the device. The cross-section viewof FIG. 4A is taken along line B-B′ of FIG. 4, being along the channellength of the device, which in the presently described embodiment is ap-channel device. Those of skill in the art will understand that thepresent invention can be implemented as an n-channel device.

Anti-fuse transistor 100 includes a variable thickness gate oxide 102formed on the substrate channel region 104, a polysilicon gate 106,sidewall spacers 108, a field oxide region 109 a diffusion region 110,and an LDD region 114 in the diffusion region 110. A bitline contact 116is shown to be in electrical contact with diffusion region 110. Thevariable thickness gate oxide 102 consists of a thick oxide and a thingate oxide such that a portion of the channel length is covered by thethick gate oxide and the remaining portion of the channel length iscovered by the thin gate oxide. Generally, the thin gate oxide is aregion where oxide breakdown can occur. The thick gate oxide edgemeeting diffusion region 110 on the other hand, defines an access edgewhere gate oxide breakdown is prevented and current between the gate 106and diffusion region 110 is to flow for a programmed anti-fusetransistor. While the distance that the thick oxide portion extends intothe channel region depends on the mask grade, the thick oxide portion ispreferably formed to be at least as long as the minimum length of a highvoltage transistor formed on the same chip.

In a preferred embodiment, the diffusion region 110 is connected to abitline through a bitline contact 116, or other line for sensing acurrent from the polysilicon gate 106, and can be doped to accommodateprogramming voltages or currents. This diffusion region 110 is formedproximate to the thick oxide portion of the variable thickness gateoxide 102. To further protect the edge of anti-fuse transistor 100 fromhigh voltage damage, or current leakage, a resistor protection oxide(RPO), also known as a salicide protect oxide, can be introduced duringthe fabrication process to further space metal particles from the edgeof sidewall spacer 108. This RPO is preferably used during thesalicidiation process for preventing only a portion of diffusion region110 and a portion of polysilicon gate 106 from being salicided.

It is well known that salicided transistors are known to have higherleakage and therefore lower breakdown voltage. Thus having anon-salicided diffusion region 110 will reduce leakage. Diffusion region110 can be doped for low voltage transistors or high voltage transistorsor a combination of the two resulting in same or different diffusionprofiles.

A simplified plan view of the anti-fuse transistor 100 is shown in FIG.4B. Bitline contact 116 can be used as a visual reference point toorient the plan view with the corresponding cross-sectional view of FIG.4A. The active area 118 is the region of the device where the channelregion 104 and diffusion region 110 is formed, which is defined by an ODmask during the fabrication process. The dashed outline 120 defines theareas in which the thick gate oxide is to be formed via an OD2 maskduring the fabrication process. More specifically, the area enclosed bythe dashed outline 120 designates the regions where thick oxide is to beformed. OD simply refers to an oxide definition mask that is used duringthe CMOS process for defining the regions on the substrate where theoxide is to be formed, and OD2 refers to a second oxide definition maskdifferent than the first.

Programming of anti-fuse transistor 100 is based on gate oxide breakdownto form a permanent link between the gate and the channel underneath.Gate oxide breakdown conditions (voltage or current and time) dependprimarily on i) gate dielectric thickness and composition, ii) defectdensity, and iii) gate area, gate/diffusion perimeter. The combinedthick and thin gate oxide of anti-fuse transistor 100 results in alocally lowered gate breakdown voltage, in particular an oxide breakdownzone, in the thin gate oxide portion of the device. Anti-fuse transistor100 is but one type of anti-fuse device which can be used in an OTPmemory. Those skilled in the art will understand that different types ofanti-fuse devices are programmed in a similar manner.

As with any fabricated semiconductor memory device, random defects canoccur during manufacturing. More specifically, memory cells can sufferfrom physical defects that alter its characteristics. Such defects canrender the OTP memory inoperable, since data may not be reliably storedin the defective cells. In a newly manufactured anti-fuse memory array,all the cells should be read as having an unprogrammed logic state. Forexample, an unprogrammed state logic state can correspond to a “0”.However, due to manufacturing defects, some of the anti-fuse cells willleak current. In the present example, anti-fuse cells which leak currentwill read as a logic “1” state, which corresponds to a programmed stateof the cell. These types of defective cells are referred to as leakycells. Conversely, some anti-fuse cells may be difficult to program,thereby reading out a logic “0” state when it should be reading out as alogic “1” state. These types of defective cells are referred to as weakcells.

In order to improve overall manufacturing yield, redundancy schemes havebeen developed to repair memory arrays having defective cells. A wellknown redundancy technique of replacing rows and/or columns containing adefective cell with spare rows and/or columns can be used. However, suchtechniques introduce significant logic overhead for re-routing addresseswhile trying to ensure transparent operation and minimum diminishedperformance to the end user.

Examples of prior redundancy schemes are disclosed in the following USpatents. In U.S. Pat. No. 6,421,799, a redundant ROM stores parity bitsfor rows and columns of main memory. A testing circuit calculates aparity for each row and column. In U.S. Pat. No. 6,944,083 a good copyof the sensitive data is stored in a different physical location. Iftampering of memory is detected by comparing data stored in main memorywith data stored in redundancy, data in the main memory is identified asunusable and data retrieved from redundant memory is used instead. InU.S. Pat. No. 7,047,381 multistage programming is implemented in the OTParray with use of the redundant rows. In U.S. Pat. No. 7,003,713 an OTPmodule receives encoded host data from the host integrated circuit andprovides a copy of corrected host data to the host integrated circuit.

Most redundancy schemes require significant additional logic, whichultimately increases the chip area or macro footprint. Therefore a newredundancy scheme that minimizes logic overhead while maximizing overallyield is needed.

SUMMARY OF THE INVENTION

In a first aspect, there is provided a redundancy method for anon-volatile memory. The method includes identifying a memory cell of acell group having a defect, and programming an inverted version of datato be stored in the cell group when the memory cell has a preset logicstate mismatching a bit of the data to be stored in the memory cell. Inone embodiment, the method can further include after identifying,detecting the bit of the data by comparing the preset logic state of thememory cell to a logic state of the bit of the data, and the presetlogic state mismatches the bit of the data when the preset logic statecorresponds to a programmed state and the bit of the data inhibitsprogramming of the memory cell.

In another embodiment of the present aspect, the cell grouping includesa data cell group for storing program data and an inversion status cellfor storing an inversion status bit, where programming can includeinverting the program data and the inversion status bit. Either thememory cell having the defect is one of the data cell group, or thememory cell having the defect is the inversion status cell. In thepresent embodiment, when programming includes inhibiting programming ofthe memory cell, inhibiting includes re-inverting the bit of the data tobe stored in the memory cell prior to programming to inhibit programmingof the memory cell.

In the present embodiments, the method can include reading the invertedversion of the data stored in the cell group, which includes detectingthe inversion status bit having a logic level indicating the data cellgroup stores an inverted version of the data. Detecting includesre-inverting the inverted version of the data when the inversion statusbit having the logic level is detected.

In yet another embodiment of the present aspect, identifying is executedduring programming of data to the cell group before programming theinverted version of the data, and includes determining that the memorycell is unprogrammable. Determining includes reversing the programmingof the data to the cell group after the memory cell is determined to beunprogrammable.

In a second aspect, there is provided a redundancy method for anon-volatile memory (NVM). The method includes reclaiming a defectivecell a cell group of NVM cells, storing program data in the cell group,setting an inversion status cell, and providing read data from the cellgroup. Reclaiming is achieved by setting the defective cell to apermanent logic state. In storing the program data, the program data isinverted relative to input data received by the NVM if the permanentlogic state of the defective cell and a logic state of a bit of theinput data to be stored in the defective cell mismatch. Setting includessetting the inversion status cell to a predetermined logic state whenthe program data is inverted relative to the input data. In providingthe read data, the read data is inverted if the inversion status cellstores the predetermined logic state. In an embodiment of the presentaspect, unprogrammed cells store a first logic state and programmedcells store a second logic state, and the defective cell functions as aprogrammed cell. Reclaiming then includes programming the defective cellto store the second logic state as the permanent logic state, andsetting the inversion status cell then includes programming theinversion status cell to store the second logic state as thepredetermined logic state.

In a third aspect, there is provided a non-volatile memory. Thenon-volatile memory includes n cells for storing an n-bit entry and aninversion status cell. The n cells store an n-bit entry where adefective cell of the n cells is settable to a permanent logic state,where n is an integer value of at least 1. The inversion status cell isprogrammable from a default first logic state to a second logic statewhen the n cells store program data inverted relative to input datareceived by the non-volatile memory. In an embodiment of the presentaspect, the non-volatile memory further includes a data register. Thedata register inverts the input data into the program data in responseto a mismatch between the permanent logic state of the defective celland a logic state of a bit of the input data to be programmed to thedefective cell, and inverts read data from the n cells when theinversion status cell stores the second logic state. The data registerincludes n register cells and an inversion register cell. The n registercells correspond to each of the n cells for storing a bit of the inputdata and a bit of the read data. Each of the n register cells invertsthe bit of the input data in response to a program inversion signal andinverts the bit of the read data in response to a read inversion signal.The inversion register cell corresponds to the inversion status cell,and provides the program inversion signal in response to the mismatchbetween the permanent logic state of the defective cell and a logicstate of a bit of the input data to be programmed to the defective cell.

According to the present embodiment, each of the n register cellsincludes a first latch circuit for storing the bit of the input data,and a second latch circuit for storing the bit of the read data. Inalternatives to the present embodiment, each of the n register cells caninclude a program data inversion circuit for inverting the bit of theinput data in response to the program inversion signal; a read datainversion circuit for inverting the bit of the read data in response tothe read inversion signal; or a data mismatch comparison logic forcomparing the bit of the input data to the bit of the read data toprovide a defect signal indicative of the mismatch.

In another alternative to the present embodiment, the inversion registercell includes a first latch circuit storing by default the second logicstate, and a second latch circuit for storing an inversion status bitstored in the inversion status cell. The inversion status register cellprovides an output from a sense amplifier coupled to the inversionstatus cell as the read inversion signal. The inversion status registercell can alternately include defect detection logic for providing theprogram inversion signal in response to detecting the second logic stateof the inversion status cell or a defect signal indicative of themismatch between the permanent logic state of the defective cell and alogic state of the bit of the input data to be programmed to thedefective cell. The inversion status register cell can further include areset circuit for setting the first latch circuit to store the secondlogic state, and a program data inversion circuit for inverting the bitof the input data in response to the program inversion signal.

Other aspects and features of the present invention will become apparentto those ordinarily skilled in the art upon review of the followingdescription of specific embodiments of the invention in conjunction withthe accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will now be described, by way ofexample only, with reference to the attached Figures, wherein:

FIG. 1 is a circuit diagram of a DRAM-type anti-fuse cell;

FIG. 2 is a planar layout of the DRAM-type anti-fuse cell of FIG. 1;

FIG. 3 is a cross-sectional view of the DRAM-type anti-fuse cell of FIG.2 along line A-A′;

FIG. 4A is a cross-sectional view of the anti-fuse transistor of FIG.4B, according to an embodiment of the present invention;

FIG. 4B is a planar layout of the anti-fuse transistor of FIG. 4A;

FIG. 5 is a drawing illustrating an n-bit entry having a defective celland its corresponding inversion status bit, according to a presentembodiment;

FIGS. 6A, 6B and 6C are drawings illustrating example redundancyoperations, according to a present embodiment;

FIG. 7 is a block diagram of a memory having a redundancy system,according to a present embodiment;

FIG. 8 is a circuit schematic of a portion of the memory array andcircuits of the sense amplifier circuit block shown in FIG. 7;

FIG. 9 is a circuit schematic of an n-bit self-inverting data registerof FIG. 7, according to a present embodiment;

FIG. 10 is a circuit schematic of a single bit self-inverting registercell of the n-bit self-inverting data register of FIG. 7, according to apresent embodiment;

FIG. 11 is a circuit schematic of the inversion status bit register,according to a present embodiment;

FIG. 12 is a flow chart of a general method for operating an OTP memoryhaving a redundancy scheme, according to a present embodiment;

FIGS. 13A and 13B is an embodiment of the method shown in FIG. 12,according to a present embodiment;

FIG. 14 is an example showing the presently described redundancytechnique applied to a memory array;

FIG. 15 is an alternate example showing the presently describedredundancy technique applied to a memory array;

FIG. 16 is another alternate example showing the presently describedredundancy technique applied to a memory array;

DETAILED DESCRIPTION

Generally, the present invention provides a redundancy scheme fornon-volatile memories, such as OTP or electrically erasable memoriessuch as EPROM and Flash memories. The redundancy scheme uses defectivecells in non-volatile memories to increase yield by using the defectivecells to store data. The algorithm can be made transparent for userapplication during programming and during read operations. Aftermanufacturing, an array clean test is performed prior to shipment of thememory devices. This test identifies those memory cells which tend toleak more than the allowed design permits. The identified leaky cellsare programmed as logic “1” states, since they are read out as logic “1”states in the unprogrammed state. Alternately, cells which are difficultto program are retained as logic “0” states, since they cannot beprogrammed to the logic “1” state. Hence these defects are referred toas biased logic states of the cells. Each grouping of cells being an8-bit word or a word having any number of bits, includes at least oneadditional cell used as an inversion status tag bit to indicate that thestored data entry uses a biased logic state to store a bit of the dataentry.

The general principle of the presently described redundancy technique isnow discussed with reference to FIG. 5. FIG. 5 is a drawing illustratinga cell group 200 consisting of an n-bit data cell group 201, where n canbe any integer value greater than 1, and a corresponding inversionstatus cell 202. The cell group 200 stores data, which consists ofprogram data and an inversion status bit. In the present example of FIG.5, data cell group 201 is 8-bits where either the left-most bit or theright-most bit is the least significant bit (LSB). In FIG. 5, thedecimal point is used to visually distinguish data cell group 201 fromthe inversion status cell 202. It is assumed that all memory cells ofdata cell group 201 and inversion status cell 202 have a defaultunprogrammed logic state of “0” or erased logic state of “0”. In thisexample, a defective cell 204 is detected in data cell group 201, markedwith the letter “d”.

According to the present embodiments, d can be permanently set to itsbiased logic state. For example, if defective cell 204 is a leaky OTPcell that tends to read out as a logic “1” while unprogrammed instead ofthe proper logic “0”, then d is set to “1” by programming defective cell204. Next, when 8-bit data is programmed to data cell group 201, the setlogic “1” state of defective cell 204 is compared to the program databit to be stored within it. If the program data bit mismatches the setlogic state of defective cell 204, then all bits of the program data areinverted for programming into data cell group 201. Additionally, thedefault logic state of the inversion status bit is inverted andprogrammed into the inversion status cell 202. Otherwise, no inversionof the program data is required. Therefore, the defective cell 204 isreclaimed and the data cell group 201 is repaired as the defective cell204 is re-used to store a data bit. It is noted that data to be storedin the cell group 200 of FIG. 5 includes the program data to be storedin the data cell group 201 and inversion status data to be stored in theinversion status cell 202. If there are no cell defects or no inversionis required, then the inversion status cell 202 remains in a defaultunprogrammed state, which corresponds to a logic “0” in the presentexamples.

FIGS. 6A, 6B and 6C are examples illustrating the presently describedredundancy technique, where the program data has a bit matching andmismatching the set logic state of the defective cell of a data cellgroup 201. In FIG. 6A, data cell group 201 of FIG. 5 has defective cell204 permanently set to a “1” logic state (d=1), and program data 210received by the memory device is to be stored in data cell group 201.Counting from the right side of data cell group 201, defective cell 204is bit position 4 while bit position 4 of program data 210 is a logic“0”. In order to reliably store program data 210 in data cell group 201,and due to the mismatch between bit position 4 of the data cell group201 and bit position 4 of the program data 210, all bits of the datawhich includes program data 210 and the inversion status bit areinverted. The inversion process is illustrated by the circular arrows,and the resulting data stored by data cell group 201 is shown at thebottom of FIG. 6A. Because the data cell group 201 stores invertedprogram data, the inversion status cell 202 is programmed to a “1” logicstate. This “true” logic state indicates that the data stored in datacell group 201 is inverted relative to its original version. The datastored in the inversion status cell 202 is referred to as an inversionstatus bit, which is used later during a read operation whereby the datais re-inverted back to its original state. Therefore, by storing aninverted version of the received program data in the data cell group201, the defective cell 204 is reclaimed thereby allowing data cellgroup 201 to be used even though it has a detective cell 204.

FIG. 6B shows an example where different program data 212 is to beprogrammed to data cell group 201 shown in FIG. 6A. In this example, bitposition 4 of the program data and bit position 4 of the data cell group201 are both logic “1”, and therefore match. No inversion of programdata 212 is required, and the program data is directly stored in datacell group 201 as shown by the straight arrow. FIG. 6C shows an examplewhere the defective cell 204 is set to a logic “0”. It is assumed thatthe bit position 4 of data cell group 201 is known to have the defectivecell set to logic “0”. Since bit position 4 of program data 214 is alogic “1”, there is a mismatch. Accordingly, all bits of program data214 is inverted and stored in data cell group 201 while inversion statuscell 202 is programmed to a logic “1” to indicate that the correspondingdata cell group 201 stores inverted program data.

Now that the redundancy concept of the present invention has beendescribed, following is a description of a memory device or memory macrohaving the presently described redundancy scheme. Subsequent referenceto a memory device should be understood to include a memory macro. Amemory macro is an instance of the memory circuits which can beintegrated into an embedded chip or system. FIG. 7 is a block diagram ofa memory having a redundancy system, according to a present embodiment.The memory can be any non-volatile memory, but is now described withinthe context of an OTP memory. The memory device 300 includes an OTPmemory array 302, sense amplifier and column select circuitry 304, adata register 306 and databus drivers 308. The data register 306includes individual self-inverting (SI) data register 310. Eachself-inverting data register 310 corresponds to one cell group, such asthe n-bit+1 cell group 200 shown in FIGS. 5 and 6A, 6B and 6C.

The OTP memory array 302 includes bitlines and wordlines connected toOTP memory cells, such as the OTP anti-fuse transistor device 100 shownin FIGS. 4A and 4B. The bitlines are sensed by sense amplifier circuitsin sense amplifier and column select circuitry 304, which can includecolumn select circuits for multiplexing one of a multiple of bitlines toone sense amplifier circuit, as is well known in the art. Each senseamplifier circuit of sense amplifier and column select circuitry 304provides 1 bit of sensed read data for storage by latch circuits in SIdata register 310. In the present example, each of the sense amplifiercircuits also receives 1 bit of program data from latch circuits in SIdata register 310. In FIG. 7, each sense amplifier circuit provides 1bit of read data and receives 1 bit of program data via a pair of SAlines, where each pair is shown as single line SA. In the presentexample configuration, each SI data register 310 receives SA1 to SAn,where n corresponds to the size of the n-bit data cell group 201. Therecan be up to m SI data registers 310, where m is an integer value. EachSI data register 310 further receives and provides an inversion statusbit INV. As previously mentioned, each SI data register 310 correspondsto an n-bit+1 cell group. As will be described in further detail later,each SI data register 310 can invert all the bits of its receivedprogram data in the event the aforementioned mismatch condition isdetected for programming, and can re-invert all the read data bits inresponse to the inversion status bit INV in a read operation.

Each SI data register 310 receives program data from a write databus(not shown) and provides read data via datelines DL1 to DLn. It is notedthat input and output datelines for 1 bit are represented by a singledateline. The databus drivers 308 perform a well known function ofdriving a databus DB[1:y], where y<=m×n. The width of DB depends on theconfiguration of memory device 300. Additional multiplexing circuitrycan be included within the block of databus drivers 308 for coupling anyset of datelines DL1 to DLn if the width of DB is less than m×n.According to the present embodiments, the inversion status bit INV islocal to an SI data register 310 and the memory array, and is thereforenot output in a manner similar to read data, nor is it received in amanner similar to program data.

FIG. 8 is a schematic of a portion of memory array 302 of FIG. 7 and itsassociated bitline sensing circuitry located in sense amplifier andcolumn select circuitry block 304. In the present example, memory array302 is organized in a folded bitline architecture, which is well knownin the art. In order to simplify the schematic, only one folded bitlinepair BL/BL* and two wordlines are shown. Column decoder circuitry is notshown for selectively coupling multiple folded bitline pairs to thebitline sense amplifier circuitry in order to simplify the schematic.Folded bitline memory array 400 includes wordlines WL0 and WL1 connectedto the gate terminals of OTP memory cells, implemented in the presentexample as n-channel anti-fuse transistors 402 and 404, n-channelisolation transistors 406 and 408 for coupling the upper portion of thebitlines to the lower portion of the bitlines in response to signal ISO,and bitline sensing circuitry. The bitline sensing circuitry includes aprecharge circuit 410, a reference charge circuit 412, and a bitlinesense amplifier 414.

The precharge circuit 410 includes two n-channel precharge transistors416 and 418 connected in series between BL and BL* and having their gateterminals connected to precharge signal BLPCH. The shared source/drainterminal of precharge transistors 416 and 418 receives a prechargevoltage VPCH. In operation, both precharge transistors 416 and 418 willturn on to precharge bitlines BL and BL* to VPCH in response to anactive high logic level of BLPCH, in preparation for a read operation.

The reference charge circuit 412 includes n-channel steering transistors420 and 422 connected in series between BL and BL*, a capacitancecircuit implemented as an n-channel transistor 424, and a p-channelprecharge transistor 426. Steering transistor 420 has its gate terminalconnected to even selection signal E_REF, while steering transistor 422has its gate terminal connected to odd selection signal O_REF.Capacitance circuit 424 has its gate terminal connected to voltagesupply VCC, and is connected in series with precharge transistor 426between the shared source/drain terminal of steering transistors 420 and422 and voltage supply VCC. Precharge transistor 426 has its gateterminal connected to a precharge or enable signal PCH*. Generally,capacitance circuit 424 will be precharged when a low logic level PCH*pulse is received. The duration of the PCH* pulse can be predeterminedbased on the size of transistor 424 and the desired reference charge tobe provided. Once precharged, either steering transistor 420 or 422 isturned on to couple the reference charge of capacitance circuit 424 tothe corresponding bitline. By example, the charge being added to abitline can be approximately 50 millivolts. It is noted that signalsE_REF and O_REF can be controlled by the same even/odd addressing bitused for selecting WL0 or WL1. In one embodiment, activation of WL0 willcause E_REF to be activated, thereby coupling the reference charge tothe complementary bitline.

The bitline sense amplifier 414 consists of a standard cross-coupledinverter circuit which is well known in the art. The circuit includesp-channel transistors both connected in series to respective n-channeltransistors. The common drain terminal of the p-channel transistorsreceives a high logic level enable signal H_EN, while the common sourceterminal of the n-channel transistors receives a low logic level enablesignal L_EN. H_EN can be a lowered internal VCC level, while L_EN can bea VSS level. The operation of bitline sense amplifier 414 in the DRAMart is well known. When enable signals H_EN and L_EN are activated,either at the same time or at different times, bitline sense amplifier414 will sense a small voltage differential between BL and BL*, andquickly drive both BL and BL* to the full logic level states of H_EN andL_EN.

Because bitline sense amplifier 414 is connected to both bitlines BL andBL*, the logic state being programmed or read from the memory array willdepend on the memory cell that is accessed. For example, if bothanti-fuse transistors 402 and 404 store a logic “1”, bitline senseamplifier 414 will latch two different logic states depending on whichanti-fuse transistor is accessed. Therefore, a data state corrector 428is used for ensuring that the voltage level corresponding to logic “1”and “0” states is read and programmed. In the present example, if WL0 isactivated to read anti-fuse transistor 404, then signal EVEN will be atthe logic state for coupling BL* to gating transistor 430. Alternately,of WL1 is activated to read anti-fuse transistor 402, then signal EVENwill be at the opposite logic state for coupling BL to gating transistor430. The operation of data state corrector 428 is similar when programdata is to be coupled to either BL or BL* from gating transistor 432.Data state corrector 428 can be implemented as a simple bi-directionalmultiplexor controlled by signal EVEN, which can be related to theaddress used to select wordline WL0 and WL1. Signal EVEN can be relatedto signals E_REF and O_REF as well. Data to be programmed to thebitlines is provided through n-channel gating transistor 432 which iscoupled to SAi_in and controlled by program signal PGM. Data to be readfrom the bitlines is provided through n-channel gating transistor 430which is coupled to SAi_out and controlled by read signal READ. It isnoted that signals SAi_in and SAi_out correspond to the previouslydiscussed pair of SA lines. Accordingly, gating transistor 432 is turnedon during a program operation while gating transistor 430 is turned onduring a read operation. Variable “i” is an integer value between 1 andmax number n.

The memory array architecture and circuits of FIG. 8 is one example of anon-volatile memory array configuration which can be used in theembodiments of the present invention, and the presently describedredundancy scheme is not limited to the memory array configuration ofFIG. 8. The memory array architecture of FIG. 8, and in particular theconfiguration whereby separate sense amplifier input and output pathsSAi_in and SAi_out, facilitates the design and operation of theself-inverting register circuits.

FIG. 9 is a block diagram showing one SI data register 310 of FIG. 7according to a present embodiment. SI data register 500 includes one SIregister cell 502 for each bit of data to be programmed or read out frommemory array 302, and an SI register cell 504 for the inversion statusbit. The SI register cells 502 are labeled Cell 1 to Cell n, tocorrespond to the n-bit data cell group 201. As shown in FIG. 9, each SIregister cell 502 provides 1 bit of program data via an SAi_in line to asense amplifier and receives 1 bit of read data via an SAi_out line(where i=1 to n) from the sense amplifier. The 1 bit of program data isprovided by a DLi_in line, while the 1 bit of read data is output fromthe register cell by a DLi_out line.

As part of a program operation, each SI register cell 502 is configuredto compare the logic state of its received program data bit against thelogic state of the cell it is to be programmed to. In the previouslydiscussed example, a cell set to a logic “1” is a leaky defective cell.In the case of a mismatch, a mismatch flag DEFECT is provided andcascaded through the SI register cells. In otherwords, each SI registercell 502 logically OR's its mismatch flag result to that provided by aprevious SI register cell 502. The final DEFECT flag indicates if one ofthe SI register cells 502 reported a mismatch, and is received by SIregister cell 504 which checks to see if the inversion status cell isdefective or not. If one SI register cell 502 reports a mismatch or SIregister cell 504 reports that the inversion status cell is defective,then a program inversion signal PGM_INV provided by SI register cell 504is set to an active logic level. All SI register cells 502 receivePGM_INV, and are configured to invert their program data bits inresponse to the active logic level of PGM_INV. Then the inverted programdata is programmed into the corresponding cells of the data cell group.In the present example, the inverted program data is provided to thesense amplifier circuit via respective SAi_in lines. Also, the inversionstatus bit is set and the corresponding inversion status cell isprogrammed to indicate that the program data has been inverted.

In a read operation, the all SI register cells 502 receive read datafrom its respective SAi_out line, and SI register cell 504 receives thelogic state of the inversion status bit read from the correspondinginversion status cell. If the inversion status bit is at a logic levelindicating that the program data has been inverted, then read inversionsignal RD_INV is set to an active logic level. All SI register cells 502receive RD_INV, and are configured to invert their read data bits inresponse to the active logic level of RD_INV. Therefore the originalprogram data is restored and output to the databus drivers. Accordingly,the SI register cells 502 and 504 can invert either the program databits or read data bits within the register cell itself.

FIG. 10 is a circuit schematic of the SI register cell 502 shown in FIG.9, according to a present embodiment. It is noted that SI register cell600 includes many of the same circuits as the dual function shiftregister circuit disclosed in PAT 3672W-90. In order to simplify theschematic several circuits are intentionally omitted.

SI register cell 600 includes a data storage circuit 602, anauto-program inhibit circuit 604, a program data inversion circuit 606,a read data inversion circuit 608 and data mismatch comparison logic610. It is recalled that variable “i” in the signal names denotes thespecific register cell it is associated with.

Data storage circuit 602 is responsible for data input, output andlatching operations. Data storage circuit 602 includes a master latch612 and a slave latch 614 connected as a master-slave flip-flop,transfer gating device 616, and an input gating device 618. Latches 612and 614 can be implemented as simple cross-coupled inverter circuitswith a non-inverting output relative to its input, but slave latch 614is configured to be overwritten by master latch 612. Those skilled inthe art will understand that transistor sizing can be configured toachieve this desired function. Gating device 616 is shown as ann-channel transistor, but can be replaced with a transmission gate or ap-channel transistor. Gating device 616 has its gate terminal connectedto clock signal CK, which is a controlled clock signal to shift dataserially from the master latch 612 to slave latch 614. Input data DLi_inis provided to the input of master latch 612 via gating device 618 whensignal WRITE is at the active logic level, which in the present exampleis the high logic level. Output data DLi_out is provided from the outputof slave latch 614. The output of master latch 612, typically beingprogram data, is coupled to a sense amplifier via terminal SAi_in, whileread data from the sense amplifier is provided from terminal SAi_out andstored by slave latch 614.

The auto-program inhibit circuit 604 is used to verify if a programmingoperation was successful or not. The auto-program inhibit circuit 604includes a precharge device 620 and a coupling device 622 connected inseries between a voltage supply such as VDD and the input of masterlatch 612. Both devices 620 and 622 are shown as being n-channeltransistors in the present embodiment. The gate of precharge device 620is connected to precharge signal PCH and the gate of coupling device 622is connected to the output of slave latch 614. The selection of thevoltage supply depends on the logic state stored by master latch 612 forselecting a memory cell to be programmed. For example, if master latch612 stores a logic 0 (VSS) to indicate programming of the memory cellconnected to that bitline, then the voltage supply connected toprecharge device 620 will be VDD. Hence, VDD is the logic state storedin a master latch 612 for a memory cell that is not to be programmed,thereby inhibiting programming of the cell connected to that bitline.The auto-program inhibit circuit will therefore change the state of themaster latch 612 if the memory cell was successfully programmed. In thepresent example, a successfully programmed memory cell will result inslave latch 614 storing a high a logic state in a program verify readoperation following a program operation. Therefore, when PCH is drivento the high logic level, VDD is coupled to the input of master latch 612to flip its state.

The program data inversion circuit 606 includes a flip-flop circuit 624and a coupling device 626 controlled by an evaluation signal EVAL.Flip-flop circuit 624 has a D-input receiving program data latched bymaster latch 612 (SAi_in), and has a non-inverting output (Q) and aninverting output (Q*), where the inverting output is connected to oneterminal of the coupling device 626. The other terminal of the couplingdevice 626 is connected to an input of master latch 612, while its gateterminal receives EVAL. Flip-flop circuit 624 latches the data appearingon its D-input and provides the inverted version thereof on itsinverting output Q* in response to an active logic state of PGM_INVreceived at its clock input. Therefore, if the program data is to beinverted, PGM_INV is driven to the active logic level and EVAL can bepulsed to briefly turn on coupling device 626 to electrically connectthe inverting output Q* to the input of master latch 612. Therefore thelogic state of master latch 612 is inverted. The pulse duration of EVALcan be selected to be at least long enough to ensure that master latch612 is over-written or flipped.

The data mismatch comparison logic 610 is used in conjunction withprogram data inversion circuit 606, and includes an AND logic gate 628and an OR logic gate 630. AND logic gate 628 has a first input receivingan output of slave latch 614 and a second input receiving an output ofmaster latch 612. The purpose of AND logic gate 628 is to detect thecondition where a logic “0” is to be programmed to a defective cell setto permanent store a logic “1”. As previously discussed for the presentexample, a logic “1” stored in master latch 612 inhibits programming,thereby storing a logic “0” in the selected cell. However, if theselected cell has been previously determined to be defective and presetto store a logic “1”, then there is a mismatch between the data to bestored and the preset logic state of the cell. This mismatch conditionis detected by AND logic gate 628 when both master latch 612 and slavelatch 614 store a logic “1”. Therefore AND logic gate 628 outputs alogic “1” output, which can be referred to as a local DEFECT flagsignal, which is then combined with a global DEFECT flag signalDEFECTi-1 provided from a previous SI register cell 502 at OR logic gate630. The output of OR logic gate 630 is the updated global flag signalDEFECTi that is provided to the next SI register cell 502, or the SIregister cell 504. If SI register cell 600 is the first register cell,then its OR logic gate 630 has one input tied to ground or VSS as thereis no previous SI register cell to report a defect. Later, if DEFECTi isat the active logic level, which in the present example is a logic “1”,then PGM_INV is set to the active logic level to enable inversion of theprogram data.

The read data inversion circuit 608 is connected between SAi_out and theinput of slave latch 614, and includes a selector 632 and an inverter634. Selector 632 is shown as a multiplexor having a first input forreceiving SAi_out and a second input for receiving an output of inverter634, where inverter 634 has its input connected to SAi_out. Selector 632passes data from either its first input or second input, to its outputin response to signal RD_INV, which functions as a selection signal. Inits default inactive logic state, RD_INV selector 632 to pass SAi_outdirectly to slave latch 614. In its active logic state, where the readdata is to be inverted, selector 632 passes the output of inverter 634to slave latch 614. Therefore an inverted version of SAi_out is storedin slave latch 614.

FIG. 11 is a circuit schematic of the SI register cell 504 of FIG. 9,according to a present embodiment. SI register cell 700 includes many ofthe same circuits as shown for SI register cell 600 of FIG. 10. Inparticular, circuits 602, 604 and 606 are the same as those previouslydescribed for SI register cell 600. SI register cell 700 does not haveinput gating device 618 for receiving program data, an output terminalat the output of slave latch 614 for providing read data, read datainversion circuit 608, or data mismatch comparison logic 610. SIregister cell 700 is coupled to bitlines of the memory array and senseamplifier circuits which can be configured identically to the circuit ofFIG. 8.

Following is a description of the circuits that differ from SI registercell 600 of FIG. 10. Instead of having an input for receiving programdata, SI register cell 700 includes a reset circuit consisting of atransistor device 702 for coupling VDD to the input of master latch 612in response to a reset signal RST. Reset signal RST can be a pulsedsignal provided prior each programming operation to set a defaultprogram inhibit state for the inversion status cell. SI register cell700 does not require read data inversion, as the inversion status bit isnot provided externally to the memory device. The SAi_out line can beused as the RD_INV signal, or alternately, the output of slave latch 614can provide the RD_INV signal. As previously described, the inversionstatus bit being permanently set to or programmed to a logic “1”indicates that the original program data stored in the data cell group201 has been inverted due to the presence of a defective bit in the datacell group 201 or the presence of a defective inversion status cell.

Instead of data mismatch comparison logic 610, defect detection logic704 combines the global flag DEFECTi-1 from the last SI register cell502 with an output of slave latch 614. Accordingly, if either DEFECTi-1or the output of slave latch 614 is at the logic “1” state, then PGM_INVis set to the active logic “1” state. In the present example, if slavelatch 614 is at the “1” logic state, it means that the correspondingcell was previously determined to be defective, and pre-programmed to aspecific logic state. The reclamation of a defective inversion statuscell is the same as for a normal data storing cell. In the presentembodiment, defect detection logic 704 includes an OR logic gate 706. Inthe previously described embodiments, those skilled in the art shouldunderstand that alternate logic gates or circuits can be used to achievethe same desired result, since programmed and unprogrammed logic statesmay be reversed relative to those discussed for the present embodiments.

Now that example circuits have been described for implementing theredundancy scheme of the present embodiments, following are methodembodiments describing sequences for operating the described memorydevice and circuits with redundancy.

FIG. 12 is a flow chart of a general method for operating a memorydevice having a redundancy scheme, according to the present embodiments.The method starts at 800 where defective cells are identified andreclaimed. This step includes identification of leaky cells atmanufacturing and before end user programming, and by example,reclamation of leaky cells behaving as a programmed cell includespre-programming them to a permanent logic “1”. Redundancy has beenimplemented after step 800, such that previously unusable cells areprepared for storing user data.

At step 802, the end user which can also be the manufacturer, programsdata to the memory array. Cell groups, such as cell group 200, withoutany defective cells are programmed without inversion of the program databits and the inversion status bit. Cell groupings with a defective cell,such as a pre-programmed “1” cell from step 800 may be inverteddepending if the data bit position matches or mismatches thepre-programmed “1” of the corresponding defective cell.

At step 804 a read operation is executed to read data from the memoryarray. If the data is read from a cell group having a defective cell,then the read data is inverted into its original program data state foroutput. Otherwise, the read data is output without inversion. Therefore,even though program data may be stored in its inverted state, theresulting read data will always correspond to the original program dataprovided to the memory device.

FIGS. 13A and 13B show a particular embodiment of the method shown inFIG. 12. In the present method, it is assumed that the memory cells areOTP memory cells such as those described in the present application.Therefore reference is made to the circuit schematics of FIGS. 10 and11, which are configured for these OTP memory cells. The method startsat step 900 where defective cells are identified using any suitable testtechnique. For example a read operation performed on all theunprogrammed cells can help determine if any are “leaky”. Since suchleaky cells tend to behave as programmed cells, the detected defectivecells are programmed to store a permanent logic “1” at step 902. Thiscan be done by entering program data into the data register 306 of FIG.7, as would be done for a normal programming operation. However, thispre-programming of defective cells would typically be performed beforeshipping to end users for normal use and operation.

Steps 900 and 902 would be executed in step 800 of FIG. 12. It isassumed that the memory device is ready for normal operation. Programdata for a data cell group is provided to the SI register cells 502 ofFIG. 9 via the DL1_in to DLn_in lines, and is thus stored in the masterlatch 612. At step 904, a read operation is executed for the cells towhich the program data is intended to be programmed into. This data isstored in the slave latch 614 of FIG. 10, and each SI register cell 502compares its slave latch data to its corresponding program data bitstored in master latch 612 using data mismatch comparison logic 610.

At step 906, assuming that one cell is defective (logic “1”), and thecorresponding master latch 612 stores a logic “1”, a mismatch isdetected between the permanent logic state of the inversion status celland the program data bit. In this case, the method proceeds to step 908where all the program data bits are inverted. This is done by SIregister cell 504 which asserts the PGM_INV signal. In response toPGM_INV, all SI register cells 502 of the data cell group clock theirrespective flip-flops 624. At about the same time, SI register cell 504also clocks its respective flip-flop 624 in response to PGM_INV. SignalEVAL can then be pulsed to flip the logic state of master latches 612.Hence the program data of SI register cells 502, and the reset logic “1”state stored by master latch 612 of SI register cell 504 is flipped to alogic “0”. As part of step 908, and after the EVAL signal has beenpulsed, the PCH signal can be pulsed. This will re-invert the masterlatch 612 of the SI register cell 502 from the inverted logic “0” backto a logic “1” since coupling device 622 is presently turned on by the“1” logic state of the slave latch corresponding to the defective cell.Since the defective cell is already programmed, there is no need toreprogram it again. At steps 910 and 912, the cells are programmedaccording to the data stored in the mater latches 612 of SI registercells 502 and 504.

Returning to step 906, if there is no mismatch between any of the databits and the defective cell, or there is no defective cell in the cellgroup, then the data is programmed at step 914 without any program datainversion. Also, the inversion status bit remains unprogrammed. Steps904, 908 to 912 or 914 are repeatedly executed for program operations.After programming, a read operation can be executed, which starts inFIG. 13B.

At step 916, it is assumed that the bitlines have been precharged and awordline has been asserted for reading data from at least one cellgroup. The bitlines are sensed by bitline sense amplifier circuitry, andsensed bitline data is output. In the present embodiments, this sensedbitline data is provided to SI register cell 600 via the SAi_out line.Because the inversion status cell is connected to the same wordline asthe cells of the present data cell group, the inversion status bit isread at substantially the same time at step 918. In SI register cell700, the sensed inversion status bit is provided by the SAd_out line. Ifat step 920 the inversion status bit (ISB) is true, ie. a logic “1” forexample, indicating that the data of the data cell group has beeninverted relative to the original program data, then the method proceedsto step 922. At step 922, RD_INV is at the active logic level to controlselector 632 of each SI register cell 600 to pass the output of inverter630. Now the slave latches 614 store the original received program data(inverted read data), which can then be output from the memory devicevia DLi_out at step 924. Returning to step 920, if the inversion statusbit is false, ie. a logic “0” for example, then the selectors 632 ofeach SI register cell 600 couple SAi_out directly to slave latches 614.The read data is then output via the DL_out lines in their uninvertedform at step 926.

FIG. 14 is a table showing example memory array cell groups 200, programdata to be stored in each data cell group 201, and the final storedvalues in the respective cell groups 200 when the cell groups do nothave a defective cell or have one defective cell. Starting from theleft-most column in FIG. 14, different program data are shown in eachrow. The second column shows rows of data cell groups 201 and theircorresponding inversion status cell 202 after testing. Each row ofprogram data is intended to be stored in a corresponding row of a datacell group. The testing shows that cells marked with an “x” aredefective. It is noted that a status inversion cell 202 can bedefective. In the present example, it is assumed that the testidentifies leaky cells. The third column shows the status of the cellgroups 200 of the same row after the defective leaky cells areprogrammed to a logic “1” state. The fourth column shows the final stateof the programmed data of the row, stored in the cell group.

In FIG. 14, one inversion status cell 202 is used for each n-bit datacell group 201. FIG. 15 is a table showing an alternate configurationwhere two inversion status cells can be used for respective segments ofan n-bit data cell group of the cell group 200. FIG. 15 is a tablesimilar to the one shown in FIG. 14, except that now each row of programdata consists of two segments, each being 8-bits in length. Thecorresponding data cell group 201 of the row in the adjacent column isvisually divided into two 8-bit segments, and has two inversion statuscells 202 a and 202 b. In the present example, inversion status cell 202a is associated with the left-most 8-bits of the data cell group 201,while inversion status cell 202 b is associated with the right-most8-bits of the data cell group 201. Accordingly, each segment can storeinverted program data independently of the other.

The addition of further inversion status cells enables the correction ofmultiple cells. For example, in a row with 32 bits, each 8 bits of the32 bits can be assigned one inversion status cell to correct onedefective cell per 8 bits, thus correcting up to 4 defective cells perrow. The distribution of the data segments in an entry can also bevaried to optimize the method. For example the data segment can becontiguous, or distributed. For example one inversion status bit can beassigned for even data bits and another for odd data bits. Thedistribution of the data segments affects the distribution of thedefective cells that can be corrected. For example for an NVM of 32 bitswith 2 redundancy bits (one redundancy bit per 16 data bits). If thedata segments are contiguous, one defective cell can be corrected in thefirst or second 16-bit segments. If the data segments are on even andodd rows, one defective cell in even or odd bits can be corrected.

The previously described embodiments show a redundancy technique toreclaim and reuse a defective, leaky cell. The presently describedredundancy technique can be applied to reclaim and reuse a defective,weak cell. In contrast to the presently described leaky cell, a weakcell is one that is logically biased to a logic “0” as it has been founddifficult to program. The principles of the present redundancy schemeapplies to such cells when they have been detected in a cell group 200.The following method can be a modified version of steps 906, 908, 910and 912 of FIG. 13A. It is first assumed that the programming operationof the memory device is reversible. Since multiple bits are to beprogrammed at the same time, it is possible that while one cell of thecell group 200 programs its logic “1” state, another cell cannot programits logic “1” state. Using logic circuits in the dual shift register ofPAT 3672W-90, a program fail condition can be detected where the cellcannot be programmed after a number of preset programming iterationshave been attempted. Because the auto-program inhibit circuit 604 of theSI register cell 600 can be used to flip the logic state stored inmaster latch 612 after the corresponding cell has been properlyprogrammed, the only master latch 612 of the cell group 200 which hasnot successfully programmed after the preset programming iterations willhave a logic “0” stored therein. Cells for which no programming wasintended will have a logic “1” stored in the corresponding master latch612.

Since it is now known that a cell cannot be programmed (therefore weak),a program bit thus mismatches the permanent state of the failed cell,which corresponds to step 906 of FIG. 13A. In modified step 908, theprogramming of the cell group 200 is reversed to their default statesand new program data being an inversion of the original program data isloaded into the SI register cells 600. At modified step 910 the inverteddata is programmed and at modified step 912 the inversion status bit isprogrammed to indicate the presence of inverted program data in thecorresponding data cell group. Therefore, the cell which failed toprogram a logic “1” now stores a logic “0”.

Alternately, data having a bit position matching the biased logic stateof the weak cell can be found for programming to the cell group 200without any inversion after the failed programming condition isidentified. In this process, the data stored in the master latches 612are shifted to the slave latches 614, and output on the DLi_out lines toidentify the bit position where programming failed. Once the bitposition of the failed programming operation is identified, anyprogramming of the cell group 200 is reversed and suitable program datais loaded into the SI register cells 502 for programming. Accordingly,while leaky cells are identified during testing prior to use, weak cellsare identified during an in-use programming operation.

FIG. 16 is a table illustrating the presently described redundancytechnique for reclaiming both weak cells and leaky cells, according to apresent embodiment. Starting from the left-most side of the table, thefirst column lists rows of different program data. The second columnlists corresponding cell groups 200 having detected leaky cells markedwith an “x”. The third column lists the same cell groups 200 shown inrows of the second column, but having weak cells detected during aprogramming operation. The weak cells are marked with a “y”. The fourthcolumn shows the final programmed data in the cell groups 200, wheresome program data is inverted if the data bit mismatches the presetpermanent logic state of the corresponding cell in the cell group 200.For those data cell groups 201 which store inverted program data, itscorresponding inversion status cell 202 is programmed.

Looking at the program data bits from left to right, if the first bitposition from the left is to be programmed to a logic “1”, whichcorresponds to the bit position in the entry marked with a “y”. As shownin right-most column, the entries are inverted when the data valuesstarting with a “1” match the “y” position entry. Therefore wheninverted, the “y” bit stores a logic “0”, and the redundancy bit isprogrammed to the logic “1” state to indicate the inverted status of thestored data. It is noted that the same inversion status bit can be usedfor both types of errors.

The embodiments of the present invention can be used with anyprogrammable non-volatile memory, where defective cells exhibit biasedlogic states. The previously described embodiments of the self-invertingdata register 310 is one means for performing defective cell detection,program data inversion and read data inversion. Alternate techniques andcircuits can be developed for obtaining the same desired result.

In the preceding description, for purposes of explanation, numerousdetails are set forth in order to provide a thorough understanding ofthe embodiments of the invention. However, it will be apparent to oneskilled in the art that these specific details are not required in orderto practice the invention. In other instances, well-known electricalstructures and circuits are shown in block diagram form in order not toobscure the invention. For example, specific details are not provided asto whether the embodiments of the invention described herein areimplemented as a software routine, hardware circuit, firmware, or acombination thereof.

The above-described embodiments of the invention are intended to beexamples only. Alterations, modifications and variations can be effectedto the particular embodiments by those of skill in the art withoutdeparting from the scope of the invention, which is defined solely bythe claims appended hereto.

What is claimed is:
 1. A redundancy method for a non-volatile memory,comprising: a) storing program data in register cells; b) detecting amismatch between a permanent logic state of a defective cell and a logicstate of a bit of program data of the register cells by comparing alogic state of each of the memory cells to a corresponding bit of theprogram data by each of the register cells and providing a local flag ifa mismatch is detected; c) controlling each of the register cells toexecute an inversion operation for providing inverted program data whenthe mismatch is detected; d) programming the inverted program data tomemory cells of the non-volatile memory; and e) programming an inversionstatus cell corresponding to the memory cells if the mismatch isdetected.
 2. The redundancy method of claim 1, wherein the permanentlogic state of the defective cell mismatches the bit of the program datawhen the permanent logic state corresponds to a programmed state and thebit inhibits programming of the cell.
 3. The redundancy method of claim1, wherein one of the register cells is an inversion status registercell, and detecting includes generating a program inversion signal bythe inversion status register cell if the permanent logic state of thedefective cell mismatches the bit of the program data.
 4. The redundancymethod of claim 3, wherein controlling includes inverting the programdata at each of the register cells and the inversion status registercell in response to the program inversion signal.
 5. The redundancymethod of claim 1, wherein detecting further includes generating aglobal flag at a last register cell by combining the local flags of eachof the register cells with each other.
 6. The redundancy method of claim5, wherein the last register cell is an inversion status register cell,and detecting includes generating a program inversion signal by theinversion status register cell.
 7. The redundancy method of claim 6,wherein controlling includes inverting the program data at each of theregister cells and the inversion status register cell in response to theprogram inversion signal.
 8. The redundancy method of claim 1, whereinthe defective cell is one of the memory cells for storing the inputdata.
 9. The redundancy method of claim 1, wherein the defective cell isone of the memory cells for storing the inversion status data.
 10. Theredundancy method of claim 1, further including executing a readoperation after the inverted program data and the inversion status cellhave been programmed.
 11. The redundancy method of claim 10, wherein theread operation includes reading data from the memory cells.
 12. Theredundancy method of claim 11, wherein the data includes read data andinversion status data.
 13. The redundancy method of claim 12, whereinreading includes storing an inverted version of the read data in theregister cells in response to detection of the inversion status datahaving a logic level indicating the memory cells store an invertedversion of the read data.
 14. The redundancy method of claim 13, whereinstoring includes inverting the read data prior to storing in theregister cells.
 15. A redundancy method for a non-volatile memory,comprising: a) storing program data in register cells, the program dataincluding input data received by the non-volatile memory and inversionstatus data; b) detecting a mismatch between a permanent logic state ofa defective cell and a logic state of a bit of program data of theregister cells; c) controlling each of the register cells to execute aninversion operation for providing inverted program data when themismatch is detected; d) programming the inverted program data to memorycells of the non-volatile memory; and e) programming an inversion statuscell corresponding to the memory cells if the mismatch is detected. 16.The redundancy method of claim 15, wherein the permanent logic state ofthe defective cell mismatches the bit of the program data when thepermanent logic state corresponds to a programmed state and the bitinhibits programming of the cell.
 17. The redundancy method of claim 15,wherein detecting includes comparing a logic state of each of the memorycells to a corresponding bit of the program data by each of the registercells and wherein comparing includes providing a local flag if amismatch is detected.
 18. The redundancy method of claim 17, whereindetecting further includes generating a global flag at a last registercell by combining the local flags of each of the register cells witheach other.
 19. The redundancy method of claim 18, wherein the lastregister cell is an inversion status register cell, and detectingincludes generating a program inversion signal by the inversion statusregister cell.
 20. The redundancy method of claim 19, whereincontrolling includes inverting the program data at each of the registercells and the inversion status register cell in response to the programinversion signal.